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Conduction and valence band alignments at for a type-II heterodiode with an as a barrier between the VLWIR standard SL -region and at the -region. (a) The inset shows the band diagram of a VLWIR homodiode and (b) is a zoom-in of the band discontinuity between -regions.
Current density–voltage measurements of the average diameter diodes measured at with a 0 FOV. The current values listed are the values measured at reverse bias.
Quantum efficiency spectra measured at for typical diodes from each design at biases of (a) 0.0 and (b) . (c) The measured QE at the peak responsivity vs reverse bias for all samples.
Johnson-noise limited detectivity of samples C and D measured at with 0 FOV (solid lines) and with a background with FOV (dashed lines). The dotted line (red online) is the BLIP detectivity of an ideal photovoltaic device looking at a background with FOV. The inset is the resistance-area product of the best diode for samples C and D as function of reverse bias.
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