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The effect of doping the -barrier in very long-wave type-II heterodiodes
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View: Figures


Image of FIG. 1.
FIG. 1.

Conduction and valence band alignments at for a type-II heterodiode with an as a barrier between the VLWIR standard SL -region and at the -region. (a) The inset shows the band diagram of a VLWIR homodiode and (b) is a zoom-in of the band discontinuity between -regions.

Image of FIG. 2.
FIG. 2.

Current density–voltage measurements of the average diameter diodes measured at with a 0 FOV. The current values listed are the values measured at reverse bias.

Image of FIG. 3.
FIG. 3.

Quantum efficiency spectra measured at for typical diodes from each design at biases of (a) 0.0 and (b) . (c) The measured QE at the peak responsivity vs reverse bias for all samples.

Image of FIG. 4.
FIG. 4.

Johnson-noise limited detectivity of samples C and D measured at with 0 FOV (solid lines) and with a background with FOV (dashed lines). The dotted line (red online) is the BLIP detectivity of an ideal photovoltaic device looking at a background with FOV. The inset is the resistance-area product of the best diode for samples C and D as function of reverse bias.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The effect of doping the M-barrier in very long-wave type-II InAs∕GaSb heterodiodes