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High-mobility spin-cast organic thin film transistors
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/content/aip/journal/apl/93/4/10.1063/1.2952769
2008-07-28
2014-07-14

Abstract

We report high-mobility organic thin film transistors (OTFTs) with good uniformity using the small molecule organic semiconductor 2,8-difluoro-5,11-bis(triethylsilylethynyl) anthradithiophene (diF-TESADT). diF-TESADT was spin cast to form OTFTs with a carrier mobility of more than and shows a useful differential microstructure on or near pentaflorobenzenethiol (PFBT) treated Au source/drain electrodes compared to untreated Au or gate dielectric areas with improved molecular order observed on PFBT treated Auelectrodes. For short channel length devices diF-TESADT crystal grains extend between the source and drain electrodes, resulting in increasing OTFT field effect mobility for decreasing gate length.

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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-mobility spin-cast organic thin film transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/4/10.1063/1.2952769
10.1063/1.2952769
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