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High-mobility spin-cast organic thin film transistors
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We report high-mobility organic thin film transistors (OTFTs) with good uniformity using the small molecule organic semiconductor 2,8-difluoro-5,11-bis(triethylsilylethynyl) anthradithiophene (diF-TESADT). diF-TESADT was spin cast to form OTFTs with a carrier mobility of more than and shows a useful differential microstructure on or near pentaflorobenzenethiol (PFBT) treated Au source/drain electrodes compared to untreated Au or gate dielectric areas with improved molecular order observed on PFBT treated Auelectrodes. For short channel length devices diF-TESADT crystal grains extend between the source and drain electrodes, resulting in increasing OTFT field effect mobility for decreasing gate length.
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