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Electronic level alignment at the deeply buried absorber/Mo interface in chalcopyrite-based thin film solar cells
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10.1063/1.2955532
/content/aip/journal/apl/93/4/10.1063/1.2955532
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/4/10.1063/1.2955532
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

UPS (left) and IPES (right) spectra of the CIGSe (upper panels) and CIGSSe (lower panels) system. Spectra are shown for the as-introduced samples (a) and, where necessary, after treatment for (b), (c), and (d). The linear extrapolations of the leading edges to determine the VBM and CBM are shown in blue and red, respectively. The corresponding values (in eV)—together with those for the surface band gap —are also given. The VBM and CBM values have an uncertainty of .

Image of FIG. 2.
FIG. 2.

Schematic presentation of the electronic surface levels (VBM and CBM) and the determined values of the front, back, and Mo side of the investigated CIG(S)Se samples (errors for VBM and CBM are ).

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/content/aip/journal/apl/93/4/10.1063/1.2955532
2008-07-31
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electronic level alignment at the deeply buried absorber/Mo interface in chalcopyrite-based thin film solar cells
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/4/10.1063/1.2955532
10.1063/1.2955532
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