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Temperature-dependent PL spectra of (a) sample A, (b) sample B, and (c) sample C. The temperature-dependent integrated PL intensities of samples A–C are shown in (d). The results are normalized to the integrated PL intensity profile of sample A. The Arrhenius equation is used to fit the results.
Simplified energy band diagrams of samples A–C, with ground state transition energies obtained from the RT-PL spectra of Fig. 1. The energy bandgaps of GaAs and were obtained from Ref. 17. The value of was obtained by assuming an effective barrier height of for sample B. The dashed-black and bold-blue lines denote the energy band diagrams before and after intermixing, respectively. Layer names, including the wetting layer, were shown below the diagrams.
Temperature-dependent integrated PL intensities of samples A–C. The lines are guides for the eyes. Inset: Normalized PL spectra of samples A–C measured at .
Layer structure of QD samples studied in this work.
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