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Improvement of transparent organic thin film transistor performance by inserting a lithium fluoride buffer layer
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/content/aip/journal/apl/93/4/10.1063/1.2959076
2008-07-31
2014-10-25

Abstract

Pentacene-based highly transparent thin-film transistors which are fabricated by inserting a thin insulating lithium fluoride layer between pentacene and transparent source/drain electrodes are presented. Through this method, device performance can be enhanced dramatically with an average transmittance of as high as 69.72% in the visible region, indicating that the LiF layer is not responsible for optical transmission. For example, there is a significant improvement of a few times with the introduction of the -thick LiF layer, the maximum saturation drain current and the field-effect mobility. These improvements are attributed to the energy band realignment and the tunneling process.

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Scitation: Improvement of transparent organic thin film transistor performance by inserting a lithium fluoride buffer layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/4/10.1063/1.2959076
10.1063/1.2959076
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