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Improvement of transparent organic thin film transistor performance by inserting a lithium fluoride buffer layer
7.J. M. Zhao, S. T. Zhang, X. J. Wang, Y. Q. Zhan, X. Z. Wang, G. Y. Zhong, Z. J. Wang, X. M. Ding, W. Huang, and X. Y. Hou, Appl. Phys. Lett. 84, 2913 (2004).
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Pentacene-based highly transparent thin-film transistors which are fabricated by inserting a thin insulating lithium fluoride layer between pentacene and transparent source/drain electrodes are presented. Through this method, device performance can be enhanced dramatically with an average transmittance of as high as 69.72% in the visible region, indicating that the LiF layer is not responsible for optical transmission. For example, there is a significant improvement of a few times with the introduction of the -thick LiF layer, the maximum saturation drain current and the field-effect mobility. These improvements are attributed to the energy band realignment and the tunneling process.
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