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Improvement of transparent organic thin film transistor performance by inserting a lithium fluoride buffer layer
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FIG. 1.

The schematics for the transparent pentacene-based OTFT. LiF thin layer is inserted between the drain/source and pentacene.

Image of FIG. 2.

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FIG. 2.

The current-voltage characteristics of OTFT based on pentacene (a) without and (b) with LiF inserted between the active layer and the source-drain electrode.

Image of FIG. 3.

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FIG. 3.

The energy diagram of the interface between ITO and pentacene as (a) -thick, (b) -thick, and (c) -thick LiF layers were inserted.

Image of FIG. 4.

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FIG. 4.

The saturated drain current and on resistance , at a gate voltage of , as a function of LiF layer thickness for the -thick pentacene-based OTFTs.

Image of FIG. 5.

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FIG. 5.

Optical transmittance (%) for the -thick pentacene OTFTs with and without -thick LiF layer.

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/content/aip/journal/apl/93/4/10.1063/1.2959076
2008-07-31
2014-04-20

Abstract

Pentacene-based highly transparent thin-film transistors which are fabricated by inserting a thin insulating lithium fluoride layer between pentacene and transparent source/drain electrodes are presented. Through this method, device performance can be enhanced dramatically with an average transmittance of as high as 69.72% in the visible region, indicating that the LiF layer is not responsible for optical transmission. For example, there is a significant improvement of a few times with the introduction of the -thick LiF layer, the maximum saturation drain current and the field-effect mobility. These improvements are attributed to the energy band realignment and the tunneling process.

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Scitation: Improvement of transparent organic thin film transistor performance by inserting a lithium fluoride buffer layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/4/10.1063/1.2959076
10.1063/1.2959076
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