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Surface Fermi level in GaAsSb structures grown by molecular beam epitaxy on InP substrates
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10.1063/1.2959829
/content/aip/journal/apl/93/4/10.1063/1.2959829
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/4/10.1063/1.2959829

Figures

Image of FIG. 1.
FIG. 1.

Room temperature PR spectra for all samples.

Image of FIG. 2.
FIG. 2.

PR spectrum of sample A (dotted curve), fit using Eq. (3) (solid line).

Image of FIG. 3.
FIG. 3.

Band gap structure calculated for sample C (GaAsSb thickness is and Sb composition is 45.7%), solving Poisson equation. Material parameters are given in Table I.

Image of FIG. 4.
FIG. 4.

Surface Fermi level in GaAsSb alloys versus Sb content.

Tables

Generic image for table
Table I.

Material parameters of the samples: Sb composition and thickness d of the GaAsSb layers from HRXRD measurements. Energy bandgaps for heavy holes and light holes and evaluated theoretically from the Sb composition in the layers. Energy bandgap splitting calculated from theoretical bandgaps. Electric field value deduced from the PR spectra in the GaAsSb layers.

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/content/aip/journal/apl/93/4/10.1063/1.2959829
2008-07-31
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Surface Fermi level in GaAsSb structures grown by molecular beam epitaxy on InP substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/4/10.1063/1.2959829
10.1063/1.2959829
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