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Room temperature PR spectra for all samples.
PR spectrum of sample A (dotted curve), fit using Eq. (3) (solid line).
Band gap structure calculated for sample C (GaAsSb thickness is and Sb composition is 45.7%), solving Poisson equation. Material parameters are given in Table I.
Surface Fermi level in GaAsSb alloys versus Sb content.
Material parameters of the samples: Sb composition and thickness d of the GaAsSb layers from HRXRD measurements. Energy bandgaps for heavy holes and light holes and evaluated theoretically from the Sb composition in the layers. Energy bandgap splitting calculated from theoretical bandgaps. Electric field value deduced from the PR spectra in the GaAsSb layers.
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