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Surface Fermi level in GaAsSb structures grown by molecular beam epitaxy on InP substrates
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10.1063/1.2959829
/content/aip/journal/apl/93/4/10.1063/1.2959829
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/4/10.1063/1.2959829
/content/aip/journal/apl/93/4/10.1063/1.2959829
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/content/aip/journal/apl/93/4/10.1063/1.2959829
2008-07-31
2014-10-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Surface Fermi level in GaAsSb structures grown by molecular beam epitaxy on InP substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/4/10.1063/1.2959829
10.1063/1.2959829
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