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Focused ion beam specimen preparation for off-axis electron holography using Si, Ga, and Au ions
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10.1063/1.2960351
/content/aip/journal/apl/93/4/10.1063/1.2960351
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/4/10.1063/1.2960351
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Shows a scanning electron microscopy SEM image of the TEM specimen prepared by conventional FIB milling using ions. Four membranes of different thicknesses containing a junction were prepared with vacuum next to each region of interest for the reference wave.

Image of FIG. 2.
FIG. 2.

Shows the step in phase measured across the junctions as a function of the crystalline specimen thickness for specimens prepared using , , and ions.

Image of FIG. 3.
FIG. 3.

(a) shows the electrically ‘inactive’ thickness and the simulated range of the ions in silicon as a function of the mass number of the incident ions. The error bars for the simulated range indicate the straggle of the ions. (b) shows that the electrically ‘inactive’ thickness is directly proportional to the simulated ion range for the specimens prepared here. The data point with the open symbol shows the data acquired from an additional specimen prepared using Ga ions to verify the relationship.

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/content/aip/journal/apl/93/4/10.1063/1.2960351
2008-07-30
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Focused ion beam specimen preparation for off-axis electron holography using Si, Ga, and Au ions
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/4/10.1063/1.2960351
10.1063/1.2960351
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