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Probing thickness-dependent dislocation storage in freestanding Cu films using residual electrical resistivity
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10.1063/1.2961006
/content/aip/journal/apl/93/4/10.1063/1.2961006
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/4/10.1063/1.2961006
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Typical stress-strain curves for different film thickness for (a) , showing no variation of the yield strength with film thickness, and (b) , showing a clear increase in film yield strength with a reduction in film thickness.

Image of FIG. 2.
FIG. 2.

Variation of yield stress at 0.2% strain offset with on a Hall–Petch plot for different film thicknesses. The slope of the linear correlations increases with thickness reduction, implying additional thickness-dependent strengthening. The linear correlation for reaches that of bulk Cu (Ref. 2).

Image of FIG. 3.
FIG. 3.

Variation of yield stress with the number of grains across the film thickness for different grain sizes. Thickness-dependent strengthening first emerges at and becomes increasingly prominent with reductions in grain size.

Image of FIG. 4.
FIG. 4.

Variation of film electrical resistivity at 0.5% strain with film thickness. The sharp drop noted for and at small thicknesses is attributed to dislocation annihilation at the free surface.

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/content/aip/journal/apl/93/4/10.1063/1.2961006
2008-07-28
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Probing thickness-dependent dislocation storage in freestanding Cu films using residual electrical resistivity
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/4/10.1063/1.2961006
10.1063/1.2961006
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