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XTEM micrographs of SiGe samples before and after LTA. The Ge and Si concentrations are indicated in the respective micrographs (a) as grown and after LTA at (b) , (c) and (d) . XTEM micrographs in the samples after LTA at (e) , and (f) show two distinctive layers (indicated by dotted lines) in the samples; the insets show the original micrographs without dotted lines.
Experimental HRXRD RSM around the (004) and (224) diffraction peak of the SiGe samples (a) and (b) as grown; (c) and (d) laser annealed at . (a) and (c) are for the (004) diffraction peak and (b) and (d) are for the (224) diffraction peak.
Plot of the EPD as a function of laser fluence after selective chemical etching.
Resulting film properties of SiGe epilayer obtained from the experimental HRXRD RSM before and after LTA.
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