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Laser annealing induced high Ge concentration epitaxial SiGe layer in virtual substrate
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10.1063/1.2962991
/content/aip/journal/apl/93/4/10.1063/1.2962991
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/4/10.1063/1.2962991
/content/aip/journal/apl/93/4/10.1063/1.2962991
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/content/aip/journal/apl/93/4/10.1063/1.2962991
2008-07-30
2014-10-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Laser annealing induced high Ge concentration epitaxial SiGe layer in Si1−xGex virtual substrate
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/4/10.1063/1.2962991
10.1063/1.2962991
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