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Laser annealing induced high Ge concentration epitaxial SiGe layer in virtual substrate
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10.1063/1.2962991
/content/aip/journal/apl/93/4/10.1063/1.2962991
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/4/10.1063/1.2962991

Figures

Image of FIG. 1.
FIG. 1.

XTEM micrographs of SiGe samples before and after LTA. The Ge and Si concentrations are indicated in the respective micrographs (a) as grown and after LTA at (b) , (c) and (d) . XTEM micrographs in the samples after LTA at (e) , and (f) show two distinctive layers (indicated by dotted lines) in the samples; the insets show the original micrographs without dotted lines.

Image of FIG. 2.
FIG. 2.

Experimental HRXRD RSM around the (004) and (224) diffraction peak of the SiGe samples (a) and (b) as grown; (c) and (d) laser annealed at . (a) and (c) are for the (004) diffraction peak and (b) and (d) are for the (224) diffraction peak.

Image of FIG. 3.
FIG. 3.

Plot of the EPD as a function of laser fluence after selective chemical etching.

Tables

Generic image for table
Table I.

Resulting film properties of SiGe epilayer obtained from the experimental HRXRD RSM before and after LTA.

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/content/aip/journal/apl/93/4/10.1063/1.2962991
2008-07-30
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Laser annealing induced high Ge concentration epitaxial SiGe layer in Si1−xGex virtual substrate
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/4/10.1063/1.2962991
10.1063/1.2962991
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