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Chalcogenide thin-film transistors using oxygenated -type and -type phase change materials
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10.1063/1.2963401
/content/aip/journal/apl/93/4/10.1063/1.2963401
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/4/10.1063/1.2963401

Figures

Image of FIG. 1.
FIG. 1.

XRD scans for various Ox-GST films after annealing at for 1h (a) and for 300s (b). The Ox-GST films annealed at higher temperature show features of hexagonal phase. The peak around in a highly Ox-GST (35%) film and all the annealed Ox-GST films at corresponds to the (100) peak of hcp phase.

Image of FIG. 2.
FIG. 2.

Compositional variations in various Ox-GST films (O: 0%–35%, during deposition), which is measured by Auger electron spectroscopy (AES). The inset shows a typical AES depth profile of Ox-GST film, where elemental composition is relatively uniform through the whole film. It was found that the AFs of the films were GST, , , and for oxygen ratios of 0, 10, 25, and , respectively.

Image of FIG. 3.
FIG. 3.

Optical transmittance of amorphous Ox-GST (b) and annealed Ox-GST at (b). Optical band gap of this Ox-GST is observed to be larger compared to that of undoped GST. However, the trend that band gap decreases upon crystallization is observed like that observed in undoped GST.

Image of FIG. 4.
FIG. 4.

Schematic showing fabrication of -type well in -type Ox-GST by deposition of GeTe and subsequent diffusion process (a) and an optical image of a fabricated TR (b). Current-voltage curves obtained with varying gate bias voltage (c) and drain bias voltage (d). Gating characteristics for TFT are clearly obtained.

Tables

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Table I.

Results of Hall effect measurements for various Ox-GST films. -type carrier density was measured to increase with an increase in oxygen content from 10% to 35%. The ChG films are annealed at .

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/content/aip/journal/apl/93/4/10.1063/1.2963401
2008-07-31
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Chalcogenide thin-film transistors using oxygenated n-type and p-type phase change materials
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/4/10.1063/1.2963401
10.1063/1.2963401
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