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High thermal stability of vacancy clusters formed in MeV Si-self-ion-implanted Si
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10.1063/1.2963480
/content/aip/journal/apl/93/4/10.1063/1.2963480
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/4/10.1063/1.2963480
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

SIMS profiles of B before and after Si ion implantation annealing in for (a) the as-grown sample and (b) the sample preimplanted with Si ions and preannealed at for in nitrogen.

Image of FIG. 2.
FIG. 2.

SIMS profiles of B before and after oxidation at for 3 and , respectively, for (a) the as-grown sample and (b) the sample preimplanted with Si ions and pre-annealed at for in .

Image of FIG. 3.
FIG. 3.

(a) The B profile spreading (at ) before and after oxidation at for for the as-grown sample and the sample with MeV Si ion implantation annealing , respectively, (b) The B profile spreading before and after oxidation at for 3 and , respectively, for the sample with MeV Si ion implantation annealing in .

Image of FIG. 4.
FIG. 4.

The time averaged boron jump frequency for the as-grown sample during annealing at in oxygen for . The insert shows the SIMS profile of B and the best fit. The jump frequency at the surface is estimated by extrapolation.

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/content/aip/journal/apl/93/4/10.1063/1.2963480
2008-07-30
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High thermal stability of vacancy clusters formed in MeV Si-self-ion-implanted Si
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/4/10.1063/1.2963480
10.1063/1.2963480
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