1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The role of strain in hydrogenation induced cracking in structures
Rent:
Rent this article for
USD
10.1063/1.2963489
/content/aip/journal/apl/93/4/10.1063/1.2963489
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/4/10.1063/1.2963489
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

SIMS H profiles from hydrogenated samples with a buried thin strained layer of (a) , (b) , and (c) , respectively. Note that H trapping increases with the increase in Ge concentration.

Image of FIG. 2.
FIG. 2.

TEM micrographs obtained from hydrogenated samples with a buried thin layer of (a) , (b) , and (c) , respectively. Note that H-induced cracking is smoother for the highest Ge concentration.

Image of FIG. 3.
FIG. 3.

The out-of-plane strain as a function of depth for hydrogenated samples with a buried thin layer of (a) , (b) , and (c) , respectively. The data are obtained by Bede RADS autofit to x-ray scan around the Si(004) diffraction peak.

Image of FIG. 4.
FIG. 4.

Random and channeling RBS profiles obtained from the hydrogenated sample. The profile for the as-grown sample is also plotted for comparison. The shadowed regions correspond to displacements at the interface for the hydrogenated sample and at the surface for the as-grown sample.

Loading

Article metrics loading...

/content/aip/journal/apl/93/4/10.1063/1.2963489
2008-07-30
2014-04-19
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The role of strain in hydrogenation induced cracking in Si∕Si1−xGex∕Si structures
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/4/10.1063/1.2963489
10.1063/1.2963489
SEARCH_EXPAND_ITEM