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SIMS H profiles from hydrogenated samples with a buried thin strained layer of (a) , (b) , and (c) , respectively. Note that H trapping increases with the increase in Ge concentration.
TEM micrographs obtained from hydrogenated samples with a buried thin layer of (a) , (b) , and (c) , respectively. Note that H-induced cracking is smoother for the highest Ge concentration.
The out-of-plane strain as a function of depth for hydrogenated samples with a buried thin layer of (a) , (b) , and (c) , respectively. The data are obtained by Bede RADS autofit to x-ray scan around the Si(004) diffraction peak.
Random and channeling RBS profiles obtained from the hydrogenated sample. The profile for the as-grown sample is also plotted for comparison. The shadowed regions correspond to displacements at the interface for the hydrogenated sample and at the surface for the as-grown sample.
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