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Role of structural defects in the unipolar resistive switching characteristics of structures
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10.1063/1.2963983
/content/aip/journal/apl/93/4/10.1063/1.2963983
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/4/10.1063/1.2963983
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) XRD scan result of a NiO film grown on a substrate and (b) -scan plot of Ni(200) and Pt(200) reflections.

Image of FIG. 2.
FIG. 2.

Typical characteristics of and obtained during repetitive switching cycles.

Image of FIG. 3.
FIG. 3.

Switching voltage distribution of pads (obtained during ten switching cycles) in (a) (polycrystalline NiO) and (b) (epitaxial NiO). Filled and open squares indicate set and reset voltages, respectively. Dotted lines correspond to average set and reset voltages for the polycrystalline NiO sample.

Image of FIG. 4.
FIG. 4.

(a) Model structure for grain boundary in NiO. The vacancy sites are marked by A–D. [(b) and (c)] The spin-decomposed DOS for nickel vacancies at sites A and C in (a), respectively. [(d) and (e)] DOS for oxygen vacancies at sites B and D in (a), respectively. The Fermi level is set to zero.

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/content/aip/journal/apl/93/4/10.1063/1.2963983
2008-07-28
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Role of structural defects in the unipolar resistive switching characteristics of Pt∕NiO∕Pt structures
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/4/10.1063/1.2963983
10.1063/1.2963983
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