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(a) XRD scan result of a NiO film grown on a substrate and (b) -scan plot of Ni(200) and Pt(200) reflections.
Typical characteristics of and obtained during repetitive switching cycles.
Switching voltage distribution of pads (obtained during ten switching cycles) in (a) (polycrystalline NiO) and (b) (epitaxial NiO). Filled and open squares indicate set and reset voltages, respectively. Dotted lines correspond to average set and reset voltages for the polycrystalline NiO sample.
(a) Model structure for grain boundary in NiO. The vacancy sites are marked by A–D. [(b) and (c)] The spin-decomposed DOS for nickel vacancies at sites A and C in (a), respectively. [(d) and (e)] DOS for oxygen vacancies at sites B and D in (a), respectively. The Fermi level is set to zero.
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