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A pure electroluminescence from metal-oxide-silicon tunneling diode using dislocation network
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10.1063/1.2965126
/content/aip/journal/apl/93/4/10.1063/1.2965126
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/4/10.1063/1.2965126
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The TEM micrographs of dislocation related MOS diode based on the DSB wafer. (a) The cross section of the MOS diode. (b) The structure of dislocation network contained in the MOS diode.

Image of FIG. 2.
FIG. 2.

The curves of (a) the dislocation related MOS diode based on the DSB wafer and (b) the referenced MOS diode based on the common wafer. The EL is observed under negative gate bias.

Image of FIG. 3.
FIG. 3.

The luminescence spectra of MOS diodes. (a) The EL spectra of dislocation related MOS diode obtained under different currents at 77 K. The inset is an EL spectrum of referenced MOS diode based on common wafer at room temperature. (b) The D1 luminescence at different temperatures. The inset is the temperature dependence of energy position for D1-line peak.

Image of FIG. 4.
FIG. 4.

The energy band diagrams of MOS diode based on the DSB wafer under gate bias of (a) 0 V and (b) .

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/content/aip/journal/apl/93/4/10.1063/1.2965126
2008-07-29
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: A pure 1.5 μm electroluminescence from metal-oxide-silicon tunneling diode using dislocation network
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/4/10.1063/1.2965126
10.1063/1.2965126
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