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Epitaxial structure of the N-polar HEMT used for both theoretical calculations and experimental measurements in this study.
Conduction band diagram of the HEMT used in this experiment. The N-polar surface is on the right hand side.
Theoretical calculations for mobility limited by optical phonon, ionized impurity and alloy disorder scattering, the total mobility, and the experimentally measured data plotted vs 2DEG sheet charge and channel electric field as the gate is pinched off.
Material constants for the device structure measured in this study.14
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