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Electron mobility in N-polar GaN/AlGaN/GaN heterostructuress
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10.1063/1.2965483
/content/aip/journal/apl/93/4/10.1063/1.2965483
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/4/10.1063/1.2965483

Figures

Image of FIG. 1.
FIG. 1.

Epitaxial structure of the N-polar HEMT used for both theoretical calculations and experimental measurements in this study.

Image of FIG. 2.
FIG. 2.

Conduction band diagram of the HEMT used in this experiment. The N-polar surface is on the right hand side.

Image of FIG. 3.
FIG. 3.

Theoretical calculations for mobility limited by optical phonon, ionized impurity and alloy disorder scattering, the total mobility, and the experimentally measured data plotted vs 2DEG sheet charge and channel electric field as the gate is pinched off.

Tables

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Table I.

Material constants for the device structure measured in this study.14

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/content/aip/journal/apl/93/4/10.1063/1.2965483
2008-07-29
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electron mobility in N-polar GaN/AlGaN/GaN heterostructuress
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/4/10.1063/1.2965483
10.1063/1.2965483
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