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Noncontact inspection technique for electrical failures in semiconductor devices using a laser terahertz emission microscope
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10.1063/1.2965810
/content/aip/journal/apl/93/4/10.1063/1.2965810
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/4/10.1063/1.2965810
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Position of the LTEM among other nondestructive LSIC testing methods.

Image of FIG. 2.
FIG. 2.

(a) Experimental setup of LTEM for LSIC inspection. (b) The laser reflection image of the Si-MOSFET chip. The test circuits circled in white have lines damaged by cutting them by FIB. (c) Schematic of the -MOSFET circuit structure indicated by the white circles in (b). (d) A cross section of the -MOSFET circuit in (c).

Image of FIG. 3.
FIG. 3.

Comparison of the terahertz emission images and waveforms between a normal chip and a defective one: [(a) and (b)] the terahertz emission images from the normal chip and the defective one, respectively. White and black areas show positive and negative amplitude of terahertz emissions from junctions surrounded by four electrode pads each. The white arrows indicate three damaged MOSFET circuits in the defective chip; [(c) and (d)] the terahertz emission waveforms from the normal chip and the defective one, respectively.

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/content/aip/journal/apl/93/4/10.1063/1.2965810
2008-07-31
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Noncontact inspection technique for electrical failures in semiconductor devices using a laser terahertz emission microscope
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/4/10.1063/1.2965810
10.1063/1.2965810
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