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SEM images of Au catalysts evaporated on -terminated silicon substrates with a thickness of (a) and (b) . Au catalysts evaporated on H-terminated silicon substrates with a thickness of (c) and (d) . (e) SEM image of -thick Au evaporated on H-terminated silicon after HF treatment for . The scale bars in the figures are .
Top-view SEM image of high-density Ge nanowires grown on -thick Au catalysts evaporated on -terminated silicon substrates. The inset shows their cross-section image.
Top-view SEM image of Ge nanowires grown on H-terminated silicon substrates. Inset shows the enlarged image of one wire, and it exhibits the same diameter as that grown on -terminated substrates.
(a) Top-view SEM image of high-density and well-ordered Ge nanowires grown on -thick Au catalysts evaporated on H-terminated silicon (100) after being dipped into the HF solution to remove the overlayer. The bottom edge is the  cleavage direction. The inset shows its side-view SEM image, and the scale bar is . (b) Three-dimensional schematic of the Ge nanowire growth direction on a Si (100) wafer. Four dashed arrows directed to , , , and are the Ge nanowire growth directions.
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