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The impacts of surface conditions on the vapor-liquid-solid growth of germanium nanowires on Si (100) substrate
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10.1063/1.2968201
/content/aip/journal/apl/93/4/10.1063/1.2968201
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/4/10.1063/1.2968201
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Figures

Image of FIG. 1.
FIG. 1.

SEM images of Au catalysts evaporated on -terminated silicon substrates with a thickness of (a) and (b) . Au catalysts evaporated on H-terminated silicon substrates with a thickness of (c) and (d) . (e) SEM image of -thick Au evaporated on H-terminated silicon after HF treatment for . The scale bars in the figures are .

Image of FIG. 2.
FIG. 2.

Top-view SEM image of high-density Ge nanowires grown on -thick Au catalysts evaporated on -terminated silicon substrates. The inset shows their cross-section image.

Image of FIG. 3.
FIG. 3.

Top-view SEM image of Ge nanowires grown on H-terminated silicon substrates. Inset shows the enlarged image of one wire, and it exhibits the same diameter as that grown on -terminated substrates.

Image of FIG. 4.
FIG. 4.

(a) Top-view SEM image of high-density and well-ordered Ge nanowires grown on -thick Au catalysts evaporated on H-terminated silicon (100) after being dipped into the HF solution to remove the overlayer. The bottom edge is the [110] cleavage direction. The inset shows its side-view SEM image, and the scale bar is . (b) Three-dimensional schematic of the Ge nanowire growth direction on a Si (100) wafer. Four dashed arrows directed to [101], [011], , and are the Ge nanowire growth directions.

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/content/aip/journal/apl/93/4/10.1063/1.2968201
2008-08-01
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The impacts of surface conditions on the vapor-liquid-solid growth of germanium nanowires on Si (100) substrate
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/4/10.1063/1.2968201
10.1063/1.2968201
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