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Low temperature improvement on silicon oxide grown by electron-gun evaporation for resistance memory applications
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10.1063/1.2957655
/content/aip/journal/apl/93/5/10.1063/1.2957655
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/5/10.1063/1.2957655
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Plot of current density vs bias voltage for the film that was treated with fluid. Insets: (top right) the curve of vs for the current density in negative bias condition, and (bottom left) the schematic band diagram of trap-assisted tunneling in negative bias condition, (bottom right) the schematic band diagram accounting for leakage current generated from interface states in positive bias condition.

Image of FIG. 2.
FIG. 2.

(a) Current curves vs bias voltage for the film that was treated with vapor. The inset shows the stability of the state at reading voltage of . (b) Plot of vs for the current density of the high resistance state in negative bias condition. The inset shows the schematic band diagram describing the PF emission.

Image of FIG. 3.
FIG. 3.

(a) Current curves vs bias voltage for the film that was treated with cosolvent added fluid. The insets show the stability of the state at reading voltage of and the switching operations for 1, 100, and . (b) Plot of vs for the current density of the high resistance state in negative bias condition. The inset shows the schematic band diagram including the SR emission (at low electric field) and PF emission (at high electric field).

Image of FIG. 4.
FIG. 4.

(a) A possible mechanism interpreting the resistive switching behavior. (b) The conduction mechanism in positive/negative bias condition with twisted band diagram ( state), where the dash line is the original band diagram ( state).

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/content/aip/journal/apl/93/5/10.1063/1.2957655
2008-08-05
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low temperature improvement on silicon oxide grown by electron-gun evaporation for resistance memory applications
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/5/10.1063/1.2957655
10.1063/1.2957655
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