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High-performance amorphous gallium indium zinc oxide thin-film transistors through plasma passivation
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10.1063/1.2962985
/content/aip/journal/apl/93/5/10.1063/1.2962985
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/5/10.1063/1.2962985
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic cross section of an inverted-staggered -GIZO TFT.

Image of FIG. 2.
FIG. 2.

curve of an -GIZO TFT fabricated using the conventional TFT process, after the source/drain pattern and the passivation pattern. The width/length of the TFT used was .

Image of FIG. 3.
FIG. 3.

(a) RBS spectra of an as-deposited -GIZO film and an -GIZO film plasma-treated for . (b) SIMS depth profile of an as-deposited -GIZO film and a passivation -deposited -GIZO film. The thicknesses of the deposited -GIZO and films were 70 and , respectively.

Image of FIG. 4.
FIG. 4.

(a) The transfer curve of the -GIZO TFT after plasma treatment, and after plasma treatment and continuous deposition. (b) XPS depth profile of an as-deposited -GIZO film and an plasma-treated -GIZO film.

Image of FIG. 5.
FIG. 5.

Plot of characteristics of plasma-treated -GIZO TFT fabricated using the conventional TFT process. The width/length of the TFT used was . The exposure time was .

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/content/aip/journal/apl/93/5/10.1063/1.2962985
2008-08-07
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-performance amorphous gallium indium zinc oxide thin-film transistors through N2O plasma passivation
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/5/10.1063/1.2962985
10.1063/1.2962985
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