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Band gap engineering for La aluminate dielectrics on Si (100)
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10.1063/1.2964181
/content/aip/journal/apl/93/5/10.1063/1.2964181
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/5/10.1063/1.2964181

Figures

Image of FIG. 1.
FIG. 1.

La core-level photoelectron spectra for La aluminate dielectrics with the ratio of La to Al of 1:1, 1:2, and 1:3.

Image of FIG. 2.
FIG. 2.

Al core-level photoelectron spectra for La aluminate dielectrics with the ratio of La to Al of 1:1, 1:2, and 1:3.

Image of FIG. 3.
FIG. 3.

REELs spectra for La aluminate and bulk dielectrics at the primary beam energy of .

Image of FIG. 4.
FIG. 4.

Valence band spectra for La aluminate dielectrics and bulk .

Tables

Generic image for table
Table I.

Band gap and band offset values for the La aluminate gate oxide films.

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/content/aip/journal/apl/93/5/10.1063/1.2964181
2008-08-05
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Band gap engineering for La aluminate dielectrics on Si (100)
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/5/10.1063/1.2964181
10.1063/1.2964181
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