1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Optical polarization properties of interband transitions in strained group-III-nitride alloy films on GaN substrates with nonpolar orientation
Rent:
Rent this article for
USD
10.1063/1.2965119
/content/aip/journal/apl/93/5/10.1063/1.2965119
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/5/10.1063/1.2965119
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Unstrained excitonic energy gap of (thick line), (thin line), and (dashed line) alloys as a function of lattice constant . The inset is a schematic of the wurtzite unit cell showing the choice of coordinates.

Image of FIG. 2.
FIG. 2.

(a) Variation of the strain components , , and of an film pseudomorphically grown on an -plane GaN substrate as a function of the Al concentration . (b) Energy of the three interband excitonic transitions , , and in the strained films in the vicinity of the fundamental energy gap. Relative oscillator strengths of (c) , (d) , and (e) in the absence of strain for light linearly polarized along , , and . Their relative oscillator strengths under strain are shown in (f)–(h).

Image of FIG. 3.
FIG. 3.

(a) Variation of the strain components , , and of an film pseudomorphically grown on an -plane GaN substrate as a function of the In concentration . (b) Energy of the three interband excitonic transitions , , and in the strained films in the vicinity of the fundamental energy gap. Relative oscillator strengths of (c) , (d) , and (e) under strain for light linearly polarized along , , and .

Image of FIG. 4.
FIG. 4.

(a) Variation of the strain components , , and of an film pseudomorphically grown on an -plane GaN substrate as a function of the In concentration . (b) Energy of the three interband excitonic transitions , , and in the strained films in the vicinity of the fundamental energy gap. Relative oscillator strengths of (c) , (d) , and (e) under strain for light linearly polarized along , , and .

Loading

Article metrics loading...

/content/aip/journal/apl/93/5/10.1063/1.2965119
2008-08-08
2014-04-18
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Optical polarization properties of interband transitions in strained group-III-nitride alloy films on GaN substrates with nonpolar orientation
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/5/10.1063/1.2965119
10.1063/1.2965119
SEARCH_EXPAND_ITEM