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Intraband Auger effect in quantum dot structures
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10.1063/1.2965804
/content/aip/journal/apl/93/5/10.1063/1.2965804
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/5/10.1063/1.2965804
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

PC spectra for the three samples at without bias. Low doping and high doping mean around two and four electrons per dot, respectively. In the inset is the absorption spectrum for a sample with 20 QD layers equivalent to the one with the highest doping level.

Image of FIG. 2.
FIG. 2.

Calculated energy levels for the investigated samples for quantum numbers (solid lines) and (dashed lines) superimposed in the sample conduction band structure profile. The arrows show the optical transitions for which the oscillator strength is largest. The energy levels associated with the wetting layer (WL) and the InGaAs quantum well (QW) are also shown.

Image of FIG. 3.
FIG. 3.

PL (solid line) and interband PC (dotted line) spectra for the undoped sample at . PC spectra at (dash-dotted line) and (dashed line) are also shown. The insets around 400 and illustrate schematically the intraband and interband Auger effect, respectively.

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/content/aip/journal/apl/93/5/10.1063/1.2965804
2008-08-07
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Intraband Auger effect in InAs∕InGaAlAs∕InP quantum dot structures
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/5/10.1063/1.2965804
10.1063/1.2965804
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