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PC spectra for the three samples at without bias. Low doping and high doping mean around two and four electrons per dot, respectively. In the inset is the absorption spectrum for a sample with 20 QD layers equivalent to the one with the highest doping level.
Calculated energy levels for the investigated samples for quantum numbers (solid lines) and (dashed lines) superimposed in the sample conduction band structure profile. The arrows show the optical transitions for which the oscillator strength is largest. The energy levels associated with the wetting layer (WL) and the InGaAs quantum well (QW) are also shown.
PL (solid line) and interband PC (dotted line) spectra for the undoped sample at . PC spectra at (dash-dotted line) and (dashed line) are also shown. The insets around 400 and illustrate schematically the intraband and interband Auger effect, respectively.
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