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Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistors
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10.1063/1.2966145
/content/aip/journal/apl/93/5/10.1063/1.2966145
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/5/10.1063/1.2966145
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) A schematic cross-sectional view and (b) a plane view of self-aligned top-gate -GIZO TFTs.

Image of FIG. 2.
FIG. 2.

Plots of the (a) sheet resistance as a function of the Ar plasma treatment time at a fixed -GIZO thickness of 70 nm and (b) sheet resistance as a function of the -GIZO thickness at a fixed Ar plasma treatment time of 60 s.

Image of FIG. 3.
FIG. 3.

Plots of the (a) voltage-current curves with different contact sizes of , , , , and and (b) contact resistance as a function of the contact area. The -GIZO thickness and Ar plasma treatment time are 70 nm and 60 s, respectively.

Image of FIG. 4.
FIG. 4.

RBS spectra of an -GIZO thin film in terms of Ar plasma treatment time. The vertical arrows in the figure indicate the scattering energy positions that each element begins to detect.

Image of FIG. 5.
FIG. 5.

Plots of the drain current as a function of the (a) gate voltage with different drain voltages and (b) drain voltage with different gate voltages. The -GIZO thickness and Ar plasma treatment time are 70 nm and 60 s, respectively.

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/content/aip/journal/apl/93/5/10.1063/1.2966145
2008-08-04
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/5/10.1063/1.2966145
10.1063/1.2966145
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