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(a) A schematic cross-sectional view and (b) a plane view of self-aligned top-gate -GIZO TFTs.
Plots of the (a) sheet resistance as a function of the Ar plasma treatment time at a fixed -GIZO thickness of 70 nm and (b) sheet resistance as a function of the -GIZO thickness at a fixed Ar plasma treatment time of 60 s.
Plots of the (a) voltage-current curves with different contact sizes of , , , , and and (b) contact resistance as a function of the contact area. The -GIZO thickness and Ar plasma treatment time are 70 nm and 60 s, respectively.
RBS spectra of an -GIZO thin film in terms of Ar plasma treatment time. The vertical arrows in the figure indicate the scattering energy positions that each element begins to detect.
Plots of the drain current as a function of the (a) gate voltage with different drain voltages and (b) drain voltage with different gate voltages. The -GIZO thickness and Ar plasma treatment time are 70 nm and 60 s, respectively.
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