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Suppression of annealing-induced In diffusion in Be-doped GaInAsN/GaAs quantum well
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10.1063/1.2966146
/content/aip/journal/apl/93/5/10.1063/1.2966146
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/5/10.1063/1.2966146
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Integrated PL intensity (a) and the emission wavelength (b) as a function of the annealing time at . The inset in (b) shows the measured PL spectra after 900 s annealing.

Image of FIG. 2.
FIG. 2.

SIMS indium profiles from the undoped and the Be-doped GaInNAs QWs. Upon annealing, the In profile of the undoped sample becomes wider (a), whereas Be doping seems to suppress the In diffusion (b). XRD (004) rocking curves [(c) and (d)] are in good line with the SIMS results. The inset in (b) shows a beryllium SIMS profile in the as-grown case as well as in the annealed case.

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/content/aip/journal/apl/93/5/10.1063/1.2966146
2008-08-06
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Suppression of annealing-induced In diffusion in Be-doped GaInAsN/GaAs quantum well
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/5/10.1063/1.2966146
10.1063/1.2966146
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