1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Pre-atomic layer deposition surface cleaning and chemical passivation of (100) and deposition of ultrathin gate insulators
Rent:
Rent this article for
USD
10.1063/1.2966357
/content/aip/journal/apl/93/5/10.1063/1.2966357
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/5/10.1063/1.2966357
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

As , In , and Ga XPS spectra collected from surface with native oxides [1(a)–1(c)], after successive wet etching by HCl and [1(d)–1(f)], and after the wet etching and annealing at [1(g)–1(i)].

Image of FIG. 2.
FIG. 2.

In , Ga , and As XPS spectra collected from ALD- on : [(a) and (b)] from native oxide sample and [(c) and (d)] from cleaned sample.

Image of FIG. 3.
FIG. 3.

curves from MOS capacitor consisting of Pt top electrode on (a) native oxide sample and (b) cleaned sample, with various ac modulation frequencies. For cleaned sample, EOT of is determined from the accumulation capacitance of curve taken at . Plots of leakage current density vs gate bias are shown in the insets of (a) and (b). (c) curves from MOS capacitors with Pt electrodes on as-deposited (solid line), HVA (dashed line), FGA (dotted line) samples. Annealing is carried out before Pt electrode depositions.

Loading

Article metrics loading...

/content/aip/journal/apl/93/5/10.1063/1.2966357
2008-08-08
2014-04-24
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Pre-atomic layer deposition surface cleaning and chemical passivation of (100) In0.2Ga0.8As and deposition of ultrathin Al2O3 gate insulators
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/5/10.1063/1.2966357
10.1063/1.2966357
SEARCH_EXPAND_ITEM