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Anomalous positive-bias temperature instability of high-/metal gate devices with capping
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10.1063/1.2967454
/content/aip/journal/apl/93/5/10.1063/1.2967454
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/5/10.1063/1.2967454
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

shift and effective charge density of -capped HfSiON as a function of stress time with various . The inset shows the characteristics of uncapped and -capped HfSiON before (dash line) and after (solid line) the stress at 9 MV/cm for 2047 s.

Image of FIG. 2.
FIG. 2.

as a function of stress time of -capped HfSiON stressed under positive or negative gate bias at various temperatures: (a) 25 to with a gate overdrive ( or ) of . The activation energy is determined from the after a 511 s stress. (b) with a gate overdrive of or .

Image of FIG. 3.
FIG. 3.

(a) Schematic diagram of the two mechanisms responsible for the instability of -capped HfSiON stressed at the positive gate bias at various temperatures . (b) of a -capped HfSiON device stressed twice at and 9 MV/cm. Between the two stresses, the gate bias was removed for 1200 s to relax the device.

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/content/aip/journal/apl/93/5/10.1063/1.2967454
2008-08-08
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Anomalous positive-bias temperature instability of high-κ/metal gate devices with Dy2O3 capping
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/5/10.1063/1.2967454
10.1063/1.2967454
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