No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Hybrid metal-base transistor with base of sulfonated polyaniline and fullerene emitter
1.J. E. Lilienfeld, US Patent No. 1,877,140 (1932).
9.M. S. Meruvia, M. L. Munford, I. A. Hümmelgen, A. S. da Rocha, M. L. Sartorelli, A. A. Pasa, W. Schwarzacher, and M. Bonfim, J. Appl. Phys. 97, 026102 (2005).
13.R. G. Delatorre, M. L. Munford, R. Zandonay, V. C. Zoldan, A. A. Pasa, W. Schwarzacher, M. S. Meruvia, and I. A. Hümmelgen, Appl. Phys. Lett. 88, 233504 (2006).
23.W. J. da Silva, I. A. Hümmelgen, and R. M. Q. Mello, “Sulfonated polyanilene/n-type silicon junctions,” J. Mater. Sci.: Mater. Electron. (in press).
26.K. K. Ng, Complete Guide to Semiconductor Devices (Wiley, New York, 2002).
28.S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
Article metrics loading...
We demonstrate hybrid vertical architecture transistors that operate like metal-base transistors, using -type silicon as the collector, sulfonated polyaniline as the base, and fullerene as the emitter. Electrical measurements suggest that the sulfonated polyaniline base effectively screens the emitter from electric field variations occurring in the collector leading to the metal-base transistor behavior. These devices operate at low voltages and show common-emitter current gain equal to 8, which is independent of the base current up to values of and constant at collector voltages between 1 and .
Full text loading...
Most read this month