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Hybrid metal-base transistor with base of sulfonated polyaniline and fullerene emitter
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We demonstrate hybrid vertical architecture transistors that operate like metal-base transistors, using -type silicon as the collector, sulfonated polyaniline as the base, and fullerene as the emitter. Electrical measurements suggest that the sulfonated polyaniline base effectively screens the emitter from electric field variations occurring in the collector leading to the metal-base transistor behavior. These devices operate at low voltages and show common-emitter current gain equal to 8, which is independent of the base current up to values of and constant at collector voltages between 1 and .
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