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Epitaxial growth of aluminum nitride on AlGaN by reactive sputtering at low temperature
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10.1063/1.2967816
/content/aip/journal/apl/93/5/10.1063/1.2967816
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/5/10.1063/1.2967816
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

x-ray diffraction patterns of AlN films grown on Si (100) (black curve) and AlGaN substrates (dashed red curve) (a) and associated rocking curves (b) of the (0002) reflection at .

Image of FIG. 2.
FIG. 2.

Evolution of the FWHM of the (0002) peaks obtained from XRD patterns (black square) and from rocking curve (red circle) of the (0002) reflection , for AlN films, for thickness values ranging from deposited on Si (100).

Image of FIG. 3.
FIG. 3.

Cross-sectional TEM images of a sputtered AlN film on AlGaN substrate (a), and associated SAED patterns of AlGaN substrate (b), interface (c), AlN sputtered layer (d), and zoom on the diffraction spot of (c) obtained at the interface (e).

Image of FIG. 4.
FIG. 4.

HRTEM image of the interface.

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/content/aip/journal/apl/93/5/10.1063/1.2967816
2008-08-05
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Epitaxial growth of aluminum nitride on AlGaN by reactive sputtering at low temperature
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/5/10.1063/1.2967816
10.1063/1.2967816
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