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SEM image of our T-branch junction. The dc is applied between side stems, and the voltages at three voltage probes—, , and —are measured.
(a) The central probe voltage and (b) the device current vs the push-pull bias voltage for the mostly ballistic (solid line) and mostly diffusive (dashed line) modes of the TBJ operation.
The derivative of with respect to the push-pull voltage . The temperature dependence of TBJs with (a) and (b) . The channel-length dependence at (c) and (d) .
The channel-length dependence of (a) the ballisticity factor and (b) the onset voltage . Points represent our experimental data extracted from Figs. 2 and 3, while the star is a datum of the Monte Carlo simulation in Ref. 7. The lines are just guides for the eye.
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