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Carrier relaxation through two-electron process during photoconduction in highly UV sensitive quasi-one-dimensional ZnO nanowires
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10.1063/1.2968131
/content/aip/journal/apl/93/5/10.1063/1.2968131
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/5/10.1063/1.2968131

Figures

Image of FIG. 1.
FIG. 1.

(a), (b), and (c) show the FESEM micrographs of the NWs grown on glass, quartz, and sapphire substrates respectively. Insets in the figures show the magnified images of the NWs. (d), (e), and (f) are the HRTEM images of the NWs on glass, quartz, and sapphire substrates, respectively. Insets in the figure show corresponding SAED patterns.

Image of FIG. 2.
FIG. 2.

(a) Photocurrent growth and decay under application and removal of light illumination on the NWs on different substrates. The constant bias voltage is . (b) Experimental (points) and bieexponential fitting (solid line) curves of the photocurrent decrease under the steady UV illumination on the NWs on different substrates. (c) PL spectra of the NWs on different substrates.

Image of FIG. 3.
FIG. 3.

Time dependence of the photocurrent growth and decay under the periodic illumination of the light on the NWs grown on different substrates at constant bias voltage of .

Tables

Generic image for table
Table I.

The values of average diameter, initial, and steady , , , , , and for NWs grown on different substrates.

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/content/aip/journal/apl/93/5/10.1063/1.2968131
2008-08-05
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Carrier relaxation through two-electron process during photoconduction in highly UV sensitive quasi-one-dimensional ZnO nanowires
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/5/10.1063/1.2968131
10.1063/1.2968131
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