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SIMS profiles showing boron concentration versus depth diffused at different temperatures.
Temperature dependence of B diffusion coefficients in .
SIMS profiles showing boron concentration versus depth diffused at from gas phase and ion implanted sources.
Sheet resistance of a boron diffused layer as a function of reciprocal temperature measured by van der Pauw method.
Electroluminescence spectra of diodes fabricated using diffusion of boron from gas phase.
Diffusion coefficients and surface concentration for fast and slow diffusion mechanisms at different temperatures.
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