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Investigation of two-branch boron diffusion from vapor phase in -type
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10.1063/1.2968306
/content/aip/journal/apl/93/5/10.1063/1.2968306
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/5/10.1063/1.2968306

Figures

Image of FIG. 1.
FIG. 1.

SIMS profiles showing boron concentration versus depth diffused at different temperatures.

Image of FIG. 2.
FIG. 2.

Temperature dependence of B diffusion coefficients in .

Image of FIG. 3.
FIG. 3.

SIMS profiles showing boron concentration versus depth diffused at from gas phase and ion implanted sources.

Image of FIG. 4.
FIG. 4.

Sheet resistance of a boron diffused layer as a function of reciprocal temperature measured by van der Pauw method.

Image of FIG. 5.
FIG. 5.

Electroluminescence spectra of diodes fabricated using diffusion of boron from gas phase.

Tables

Generic image for table
Table I.

Diffusion coefficients and surface concentration for fast and slow diffusion mechanisms at different temperatures.

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/content/aip/journal/apl/93/5/10.1063/1.2968306
2008-08-06
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Investigation of two-branch boron diffusion from vapor phase in n-type 4H-SiC
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/5/10.1063/1.2968306
10.1063/1.2968306
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