1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Atomic resolution study of the interfacial bonding at grain boundaries
Rent:
Rent this article for
USD
10.1063/1.2968683
/content/aip/journal/apl/93/5/10.1063/1.2968683
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/5/10.1063/1.2968683
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

High-resolution -contrast image of the interface with the IGF. The Ce atoms (circled) in the nominally amorphous IGF are visible as bright contrast spots. The superimposed atomic structure shows Si and N atoms with light and dark circles, respectively. The actual arrangement of N atoms at the interface shown bonded with Si atoms in the schematic may differ when oxygen is present at the interface. The insert shows a schematic representation of the interfacial structure as found in the study by Ziegler et al. (see Ref. 11).

Image of FIG. 2.
FIG. 2.

(a) EELS line scan after background subtraction showing the O -edge and the Ce -edge as a function of position across the IGF. Only one out of every second spectrum is shown for visualization purposes. (b) O -edge and Ce -edge signals integrated over 50 eV windows and fitted to a model with two Gaussians (solid lines) as a function of position across the film. The error bars indicate the standard error of the concentration quantification. (c) Normalized O and Ce signal fits.

Image of FIG. 3.
FIG. 3.

(a) Near edge fine-structure of the Ce -edge taken from the middle and at the interface of the . The insert shows reference spectra (from Ref. 14) obtained for and , corresponding to valences of and , respectively. (b) Si and N concentration profiles across the interface extracted from an EELS line scan. The Si -edge and the N -edge were background subtracted, integrated over a 40 eV window, and multiplied by the corresponding scattering cross sections. The error bars indicate the standard error of the concentration quantification.

Loading

Article metrics loading...

/content/aip/journal/apl/93/5/10.1063/1.2968683
2008-08-06
2014-04-19
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Atomic resolution study of the interfacial bonding at Si3N4/CeO2−δ grain boundaries
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/5/10.1063/1.2968683
10.1063/1.2968683
SEARCH_EXPAND_ITEM