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High-resolution -contrast image of the interface with the IGF. The Ce atoms (circled) in the nominally amorphous IGF are visible as bright contrast spots. The superimposed atomic structure shows Si and N atoms with light and dark circles, respectively. The actual arrangement of N atoms at the interface shown bonded with Si atoms in the schematic may differ when oxygen is present at the interface. The insert shows a schematic representation of the interfacial structure as found in the study by Ziegler et al. (see Ref. 11).
(a) EELS line scan after background subtraction showing the O -edge and the Ce -edge as a function of position across the IGF. Only one out of every second spectrum is shown for visualization purposes. (b) O -edge and Ce -edge signals integrated over 50 eV windows and fitted to a model with two Gaussians (solid lines) as a function of position across the film. The error bars indicate the standard error of the concentration quantification. (c) Normalized O and Ce signal fits.
(a) Near edge fine-structure of the Ce -edge taken from the middle and at the interface of the . The insert shows reference spectra (from Ref. 14) obtained for and , corresponding to valences of and , respectively. (b) Si and N concentration profiles across the interface extracted from an EELS line scan. The Si -edge and the N -edge were background subtracted, integrated over a 40 eV window, and multiplied by the corresponding scattering cross sections. The error bars indicate the standard error of the concentration quantification.
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