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Band alignment and thermal stability of gate dielectric on SiC
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10.1063/1.2969061
/content/aip/journal/apl/93/5/10.1063/1.2969061
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/5/10.1063/1.2969061
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The valence-band and photoelectron spectra of (a) clean substrate, (b) pure grown on substrate, (c) grown on substrate at RT, and nitrided after annealing at (d) , (e) , and (f) .

Image of FIG. 2.
FIG. 2.

Core level XPS spectra of of as-grown, nitrided grown on substrate at RT, and nitrided grown on substrate after annealing at 300, 400, and .

Image of FIG. 3.
FIG. 3.

The valence-band and photoelectron spectra of (a) clean substrate, (b) pure grown on , (c) nitrided at RT, and nitrided after annealing at (d) , (e) , and (f) .

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/content/aip/journal/apl/93/5/10.1063/1.2969061
2008-08-07
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Band alignment and thermal stability of HfO2 gate dielectric on SiC
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/5/10.1063/1.2969061
10.1063/1.2969061
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