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Electron mobility in phosphorous doped {111} homoepitaxial diamond
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View: Figures


Image of FIG. 1.
FIG. 1.

Doping density (electronically activated phosphorous atoms) as a function of compensating center density (probably due to ionized defects acting as acceptors) in phosphorous doped {111} homoepitaxial diamond (symbols). The dashed line is a linear fit with . The solid lines show theoretical Hall electron mobility of equal value at room temperature (300 K) as a function of and .

Image of FIG. 2.
FIG. 2.

Compensating center density dependence of the mobility in phosphorous doped {111} homoepitaxial diamond (symbols) at room temperature. The solid lines show the theoretical contributions for ionized impurity scattering (ii), neutral impurity (ni) scattering, the joint lattice scattering ( modes) and the combined mobility (tot).

Image of FIG. 3.
FIG. 3.

(a) as a function of with ranging between 300 and 500 K. Squares denote calculated mobility with , Circles denote experimental mobility of samples with different doping levels, and line: denotes linear fit where is deduced from the slopes of the straight lines. (b) as a function of . Symbols are the values determined from the fit. Dashed line denotes least mean square fit using Eq. (2).

Image of FIG. 4.
FIG. 4.

Impurity Hall electron mobility dependence in phosphorous doped {111} homoepitaxial diamond. Symbols are experimental data at 300 K (empty circles) and 500 K (full circles). Lines are simulated mobilities using the parameters determined in this work at (solid) and (dashed).


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electron mobility in phosphorous doped {111} homoepitaxial diamond