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(a) A schematic view of the inversion-channel GaN MOSFET with as gate dielectric. (b) Cross-sectional HR-TEM image and low angle XRR of on GaN, with experimental data (dots) and a theoretical fit (line).
(a) Drain characteristic for a gate length GaN MOSFET. (b) The scaling characteristic of drain current vs gate length.
Transfer characteristics for a gate length GaN MOSFET at a drain voltage of .
(a) Leakage current density vs gate electrical field for MOSCAP and MOSFET, with the inset showing schematic view of the GaN MOSCAP. (b) curves for the MOSCAP under frequencies varying from , with the inset showing values calculated by the conductance method.
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