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Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited as gate dielectric
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10.1063/1.2969282
/content/aip/journal/apl/93/5/10.1063/1.2969282
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/5/10.1063/1.2969282
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) A schematic view of the inversion-channel GaN MOSFET with as gate dielectric. (b) Cross-sectional HR-TEM image and low angle XRR of on GaN, with experimental data (dots) and a theoretical fit (line).

Image of FIG. 2.
FIG. 2.

(a) Drain characteristic for a gate length GaN MOSFET. (b) The scaling characteristic of drain current vs gate length.

Image of FIG. 3.
FIG. 3.

Transfer characteristics for a gate length GaN MOSFET at a drain voltage of .

Image of FIG. 4.
FIG. 4.

(a) Leakage current density vs gate electrical field for MOSCAP and MOSFET, with the inset showing schematic view of the GaN MOSCAP. (b) curves for the MOSCAP under frequencies varying from , with the inset showing values calculated by the conductance method.

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/content/aip/journal/apl/93/5/10.1063/1.2969282
2008-08-07
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al2O3 as gate dielectric
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/5/10.1063/1.2969282
10.1063/1.2969282
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