1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Physical mechanisms of hydrogen-enhanced onset of epitaxial growth of silicon by plasma-enhanced chemical vapor deposition
Rent:
Rent this article for
USD
10.1063/1.2957674
/content/aip/journal/apl/93/6/10.1063/1.2957674
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/6/10.1063/1.2957674
/content/aip/journal/apl/93/6/10.1063/1.2957674
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/apl/93/6/10.1063/1.2957674
2008-08-11
2014-12-29
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Physical mechanisms of hydrogen-enhanced onset of epitaxial growth of silicon by plasma-enhanced chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/6/10.1063/1.2957674
10.1063/1.2957674
SEARCH_EXPAND_ITEM