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Illustrations of various H etching and adsorbed species transition processes of the silicon films growth upon PECVD with dilution, (a) at stable site and (b) metastable site. The corresponding etching probabilities and activation barriers for transition are also shown. I and V are stable site and metastable site of adsorbed on the surface, respectively. IV is epitaxial species.
Surface morphologies of the silicon film’s structure growing upon PECVD at various temperatures: (a) , with dilution, (b) , with dilution, (c) , with dilution, and (d) , without dilution. Black, red, green, blue, and cyan dots represent adsorbed species I, II, III, IV, and V, respectively.
The percentage of epitaxial species of the silicon films growth upon PECVD with and without dilution as a function of the temperature.
The percentages of various adsorbed species of the silicon films growth upon PECVD with dilution as a function of the temperature.
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