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Double gate GaInZnO thin film transistors
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10.1063/1.2967456
/content/aip/journal/apl/93/6/10.1063/1.2967456
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/6/10.1063/1.2967456

Figures

Image of FIG. 1.
FIG. 1.

The microscopic image of DG GIZO transistors where the thickness of GIZO, gate dielectrics, channel width, and channel length were 120 nm, 200 nm, , and , respectively.

Image of FIG. 2.
FIG. 2.

The comparison of the transfer characteristics of the three operation modes—gate shorted, grounded, and floating operation—and the inset shows the induced bias at the BG electrode while the FG bias was swept.

Image of FIG. 3.
FIG. 3.

The transfer characteristics of GIZO transistors with varying BG biases.

Image of FIG. 4.
FIG. 4.

The calculated threshold voltage and substhreshold slope at different BG biases.

Image of FIG. 5.
FIG. 5.

The spectra of at different voltages. At positive two peaks of appear but only one peak at negative . The inset shows two distinct cases of vs in linear scale at , 10 V.

Image of FIG. 6.
FIG. 6.

The equivalent capacitor circuits of electron-depleted back interface and electron-accumulated back interface (in dotted line).

Tables

Generic image for table
Table I.

The measurement conditions and electrical properties of GIZO transistors.

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/content/aip/journal/apl/93/6/10.1063/1.2967456
2008-08-12
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Double gate GaInZnO thin film transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/6/10.1063/1.2967456
10.1063/1.2967456
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