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The microscopic image of DG GIZO transistors where the thickness of GIZO, gate dielectrics, channel width, and channel length were 120 nm, 200 nm, , and , respectively.
The comparison of the transfer characteristics of the three operation modes—gate shorted, grounded, and floating operation—and the inset shows the induced bias at the BG electrode while the FG bias was swept.
The transfer characteristics of GIZO transistors with varying BG biases.
The calculated threshold voltage and substhreshold slope at different BG biases.
The spectra of at different voltages. At positive two peaks of appear but only one peak at negative . The inset shows two distinct cases of vs in linear scale at , 10 V.
The equivalent capacitor circuits of electron-depleted back interface and electron-accumulated back interface (in dotted line).
The measurement conditions and electrical properties of GIZO transistors.
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