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(a) SEM image of part of the silicon islands fabricated by the -Cz process. The dashed square corresponds to the area chosen for detailed observation in Fig. 2. (b) SCM image of the same silicon islands. Black and gray lines indicate CSL and RBs, respectively.
EBSD and SCM results for the silicon island indicated with a dashed square in Fig. 1: (a) and (b) show the results of EBSD analysis of the CSL boundaries (black line) and RBs (gray lines) for and , respectively. (c) shows the raw image from SCM. (d) shows the same SCM image as (c) but with lines to indicate the various regions. Solid line: ; dashed line: ; and dashed-dotted lines: random boundary (r).
(a) Cross-sectional profiles of capacitance at GBs. Positions of the cross sections are indicated in (b).
Maximum capacitance of the cross-sectional profiles of capacitance at the CSL and random GBs.
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