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Dynamics of ultraviolet emissions in Tm-doped AlN using above band gap excitation
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View: Figures


Image of FIG. 1.
FIG. 1.

The 10 K PL spectrum of Tm-doped AlN epilayer for . The inset shows a high resolution short range PL spectrum, which exhibits the FX peak at 207 nm.

Image of FIG. 2.
FIG. 2.

The PL spectra of AlN:Tm measured from 10 to 300 K for .

Image of FIG. 3.
FIG. 3.

Dependence of the integrated PL intensities of 298 and 358 nm intra- transitions on the sample temperature.

Image of FIG. 4.
FIG. 4.

The Arrhenius plot of the integrated PL intensity of (a) 298 and (b) 358 nm emissions in the temperature range between 60 and 300 K. The solid lines are best fits to the experimental data. The fitted values of activation energies are and for 298 and 358 nm transitions, respectively.

Image of FIG. 5.
FIG. 5.

Diagram of energy levels and intra--shell transitions in AlN:Tm illustrating the excitation path and the resulting UV emissions. is the binding energy of the exciton bound to RESI trap and the BX is indicated by the dashed ellipse.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Dynamics of ultraviolet emissions in Tm-doped AlN using above band gap excitation