1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Dynamics of ultraviolet emissions in Tm-doped AlN using above band gap excitation
Rent:
Rent this article for
USD
10.1063/1.2970993
/content/aip/journal/apl/93/6/10.1063/1.2970993
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/6/10.1063/1.2970993
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The 10 K PL spectrum of Tm-doped AlN epilayer for . The inset shows a high resolution short range PL spectrum, which exhibits the FX peak at 207 nm.

Image of FIG. 2.
FIG. 2.

The PL spectra of AlN:Tm measured from 10 to 300 K for .

Image of FIG. 3.
FIG. 3.

Dependence of the integrated PL intensities of 298 and 358 nm intra- transitions on the sample temperature.

Image of FIG. 4.
FIG. 4.

The Arrhenius plot of the integrated PL intensity of (a) 298 and (b) 358 nm emissions in the temperature range between 60 and 300 K. The solid lines are best fits to the experimental data. The fitted values of activation energies are and for 298 and 358 nm transitions, respectively.

Image of FIG. 5.
FIG. 5.

Diagram of energy levels and intra--shell transitions in AlN:Tm illustrating the excitation path and the resulting UV emissions. is the binding energy of the exciton bound to RESI trap and the BX is indicated by the dashed ellipse.

Loading

Article metrics loading...

/content/aip/journal/apl/93/6/10.1063/1.2970993
2008-08-14
2014-04-17
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Dynamics of ultraviolet emissions in Tm-doped AlN using above band gap excitation
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/6/10.1063/1.2970993
10.1063/1.2970993
SEARCH_EXPAND_ITEM