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GaNAsSb material for ultrafast microwave photoconductive switching application
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10.1063/1.2971204
/content/aip/journal/apl/93/6/10.1063/1.2971204
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/6/10.1063/1.2971204
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic diagram of epitaxial layers for the GaNAsSb photoconductive switch. (b) Top view of SMA alumina mount of the photoconductive switch with gap of .

Image of FIG. 2.
FIG. 2.

Plot of resistance of GaNAsSb vs electrode spacing.

Image of FIG. 3.
FIG. 3.

Pulsed response of GaNAsSb photoconductive switch at different laser excitation wavelengths. Inset shows carrier lifetimes of the GaNAsSb layer derived from pulsed measurement at different wavelengths.

Image of FIG. 4.
FIG. 4.

Plot of ON/OFF ratio and rf insertion losses of the GaNAsSb photoconductive switch at different frequencies.

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/content/aip/journal/apl/93/6/10.1063/1.2971204
2008-08-15
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: GaNAsSb material for ultrafast microwave photoconductive switching application
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/6/10.1063/1.2971204
10.1063/1.2971204
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