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Contactless electroreflectance of GaN bulk crystals grown by ammonothermal method and GaN epilayers grown on these crystals
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10.1063/1.2972030
/content/aip/journal/apl/93/6/10.1063/1.2972030
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/6/10.1063/1.2972030
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Photograph of 1 in. -GaN wafer manufactured at Ammono company (the thickness of this wafer equals 0.8 mm).

Image of FIG. 2.
FIG. 2.

X-ray rocking curves measured on the (0002) plane for (a) -type -GaN crystal, (b) SI -GaN crystal, (c) GaN epilayer grown on -type -GaN substrate, and (d) GaN epilayer grown on -type -GaN substrate.

Image of FIG. 3.
FIG. 3.

Room temperature CER spectra for (a) -type -GaN substrate and (b) GaN epilayer deposited by MOCVD on this substrate.

Image of FIG. 4.
FIG. 4.

Room temperature CER spectra for (a) SI -GaN substrate and (b) GaN epilayer deposited by MOCVD on this substrate.

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/content/aip/journal/apl/93/6/10.1063/1.2972030
2008-08-15
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Contactless electroreflectance of GaN bulk crystals grown by ammonothermal method and GaN epilayers grown on these crystals
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/6/10.1063/1.2972030
10.1063/1.2972030
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