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Broadband electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor
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10.1063/1.2960356
/content/aip/journal/apl/93/7/10.1063/1.2960356
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/7/10.1063/1.2960356
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Scanning electron micrograph of the MOSFET. Indicated are the source-drain contacts, the thin oxide window and the aluminum gate. The shorted CPS provides an antinode in the current and therefore a maximum magnetic field.

Image of FIG. 2.
FIG. 2.

(a) EDMR spectrum (4 sweeps) obtained by magnetic field modulation at using . The MOSFET was operated at and , resulting in . (b) EDMR spectrum (16 sweeps) obtained by FM using . For and , the resulting average current was . (c) Magnetic field dependence of (DC), measured simultaneously with the frequency modulation spectrum in (b).

Image of FIG. 3.
FIG. 3.

(a) Resonance fields of the central line as a function of MW frequency. (b) Residual data plot.

Image of FIG. 4.
FIG. 4.

Normalized EDMR signal intensity for the central resonance and HF lines as a function of .

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/content/aip/journal/apl/93/7/10.1063/1.2960356
2008-08-19
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Broadband electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/7/10.1063/1.2960356
10.1063/1.2960356
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