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ArF laser-based quantum well intermixing in InGaAs/InGaAsP heterostructures
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10.1063/1.2969063
/content/aip/journal/apl/93/7/10.1063/1.2969063
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/7/10.1063/1.2969063
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Room temperature PL map of an ArF laser patterned InGaAs/InGaAsP/InP QW heterostructure following the annealing at for 120 s. For each site, the upper and lower numbers correspond to the number of laser pulses and blueshift amplitude, respectively.

Image of FIG. 2.
FIG. 2.

XPS spectra of the reference InP sample and ArF laser exposed sites for , 50, and 150 pulses at .

Image of FIG. 3.
FIG. 3.

Dependence of the net blueshift amplitude on the number of ArF pulses delivered at 68, 75, 90, and . Solid lines correspond to the theoretically calculated dependences described by Eq. (1). The last two data points at were not considered in the fitting procedure.

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/content/aip/journal/apl/93/7/10.1063/1.2969063
2008-08-20
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: ArF laser-based quantum well intermixing in InGaAs/InGaAsP heterostructures
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/7/10.1063/1.2969063
10.1063/1.2969063
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