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Properties of dilute InAsN layers grown by liquid phase epitaxy
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10.1063/1.2975166
/content/aip/journal/apl/93/7/10.1063/1.2975166
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/7/10.1063/1.2975166
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The energy dispersive x-ray microanalysis spectrum measured from one of the InAsN LPE-grown samples.

Image of FIG. 2.
FIG. 2.

A HRXRD spectrum obtained from one of the InAsN samples (ISN14). The insets show the details of the (200) and (400) reflections.

Image of FIG. 3.
FIG. 3.

The PL emission spectra measured from two InAsN samples. ISN14 (0.56%) and ISN 11B (0.50%). The PL spectrum from a high purity LPE-grown InAs layer (dashed line) containing zero N is also presented for comparison.

Image of FIG. 4.
FIG. 4.

The temperature dependent PL spectra measured from one of the LPE-grown InAsN samples (ISN11B).

Image of FIG. 5.
FIG. 5.

Temperature dependence of the PL emission peaks observed from sample ISN14.

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/content/aip/journal/apl/93/7/10.1063/1.2975166
2008-08-22
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Properties of dilute InAsN layers grown by liquid phase epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/7/10.1063/1.2975166
10.1063/1.2975166
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