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(a) Schematic of the epitaxial structure and the deposited materials for nanopillar fabrication using a focused ion beam. (b) The field-emission scanning-electron micrographic (FESEM) image of the fabricated freestanding nanopillar with a diameter of and a length of .
(a) The measured microphotoluminescence spectrum from the freestanding nanopillar with the Pt mask and (b) without the Pt mask. The insets show the respective scanning CCD images of the device. Lorentzian analyses of the measured spectra reveal additional photoluminescence, denoted as Lorentzian 3, in the shorter wavelength region, which originates from the freestanding nanopillar.
The color maps show the calculated strain variations in a freestanding, rhombus-shaped nanopillar with a height of and an edge width of for (a) in-plane strain tensor and (b) vertical strain tensor . The vertical distributions of and at the center of the nanopillar, , and at the edge, , are also plotted.
(a) The measured power-dependent spectra of the device without the Pt mask with excitation powers ranging from . Lorentzian analyses of the measured spectra plotted for (b) the peak intensities, (c) the emission wavelengths, and (d) the FWHMs of the PL from the strained and the strain-relaxed regions.
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