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Indium incorporation dynamics into AlInN ternary alloys for laser structures lattice matched to GaN
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10.1063/1.2971027
/content/aip/journal/apl/93/8/10.1063/1.2971027
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/8/10.1063/1.2971027

Figures

Image of FIG. 1.
FIG. 1.

Typical XRD diagrams of films with ranging from 0.157 (sample A) to 0.252 (sample D) on GaN-on-sapphire (0001). The diagrams are shifted vertically for clarity.

Image of FIG. 2.
FIG. 2.

SPM surface image of a typical (Al,In)N thin film (sample ). Inset: rms surface roughness of films (20 torr reactor pressure) vs indium solid phase composition .

Image of FIG. 3.
FIG. 3.

Bright field TEM image of a laser structure using (Al,In)N/GaN layer alternations as bottom cladding. Inset: net optical gain of this structure for various incident pump power densities.

Tables

Generic image for table
Table I.

films grown under 20 torr. Growth temperature (calibrated by optical pyrometry), indium vapor phase composition , experimental lattice constant , solid phase composition according to Eq. (1), epilayer thickness , growth time , growth speed (in ML per second), Al and In incorporation probabilities , and desorbed In flux.

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/content/aip/journal/apl/93/8/10.1063/1.2971027
2008-08-29
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Indium incorporation dynamics into AlInN ternary alloys for laser structures lattice matched to GaN
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/8/10.1063/1.2971027
10.1063/1.2971027
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