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Typical XRD diagrams of films with ranging from 0.157 (sample A) to 0.252 (sample D) on GaN-on-sapphire (0001). The diagrams are shifted vertically for clarity.
SPM surface image of a typical (Al,In)N thin film (sample ). Inset: rms surface roughness of films (20 torr reactor pressure) vs indium solid phase composition .
Bright field TEM image of a laser structure using (Al,In)N/GaN layer alternations as bottom cladding. Inset: net optical gain of this structure for various incident pump power densities.
films grown under 20 torr. Growth temperature (calibrated by optical pyrometry), indium vapor phase composition , experimental lattice constant , solid phase composition according to Eq. (1), epilayer thickness , growth time , growth speed (in ML per second), Al and In incorporation probabilities , and desorbed In flux.
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