1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Strain-compensated InAs/GaNAs quantum dots for use in high-efficiency solar cells
Rent:
Rent this article for
USD
10.1063/1.2973398
/content/aip/journal/apl/93/8/10.1063/1.2973398
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/8/10.1063/1.2973398
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic layer structure of QDSC with multi-stacks of InAs QDs embedded by GaNAs SCLs or conventional GaAs spacers.

Image of FIG. 2.
FIG. 2.

Symmetric (004) XRD patterns for samples with 20 stacked layers of InAs QDs structure embedded in (a) 20 nm-thick SCLs (S2) and (b) 20 nm-thick GaAs spacer layers (S3), respectively. means -order satellite peak.

Image of FIG. 3.
FIG. 3.

Cross-sectional STEM image of 20 stacked layers of InAs QDs embedded in 20 nm-thick SCLs (S2).

Image of FIG. 4.
FIG. 4.

IQE spectra for (a) strain-compensated InAs/GaNAs QDSC with 10 stacks (S1), (b) strain-compensated InAs/GaNAs QDSC with 20 stacks (S2), (c) strained InAs/GaAs QDSC with 20 stacks (S3), (d) GaAs control cell (S4), and (e) shows the PL spectrum at room temperature for S2, respectively.

Loading

Article metrics loading...

/content/aip/journal/apl/93/8/10.1063/1.2973398
2008-08-26
2014-04-24
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Strain-compensated InAs/GaNAs quantum dots for use in high-efficiency solar cells
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/8/10.1063/1.2973398
10.1063/1.2973398
SEARCH_EXPAND_ITEM