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Schematic layer structure of QDSC with multi-stacks of InAs QDs embedded by GaNAs SCLs or conventional GaAs spacers.
Symmetric (004) XRD patterns for samples with 20 stacked layers of InAs QDs structure embedded in (a) 20 nm-thick SCLs (S2) and (b) 20 nm-thick GaAs spacer layers (S3), respectively. means -order satellite peak.
Cross-sectional STEM image of 20 stacked layers of InAs QDs embedded in 20 nm-thick SCLs (S2).
IQE spectra for (a) strain-compensated InAs/GaNAs QDSC with 10 stacks (S1), (b) strain-compensated InAs/GaNAs QDSC with 20 stacks (S2), (c) strained InAs/GaAs QDSC with 20 stacks (S3), (d) GaAs control cell (S4), and (e) shows the PL spectrum at room temperature for S2, respectively.
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