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GaSb based light emitting diodes with strained InGaAsSb type I quantum well active regions
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10.1063/1.2974795
/content/aip/journal/apl/93/8/10.1063/1.2974795
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/8/10.1063/1.2974795
/content/aip/journal/apl/93/8/10.1063/1.2974795
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/content/aip/journal/apl/93/8/10.1063/1.2974795
2008-08-26
2014-12-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: GaSb based light emitting diodes with strained InGaAsSb type I quantum well active regions
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/8/10.1063/1.2974795
10.1063/1.2974795
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