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GaSb based light emitting diodes with strained InGaAsSb type I quantum well active regions
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10.1063/1.2974795
/content/aip/journal/apl/93/8/10.1063/1.2974795
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/8/10.1063/1.2974795

Figures

Image of FIG. 1.
FIG. 1.

Schematic band of the LED (a) and a mid-IR image of a LED array at room temperature ( , b).

Image of FIG. 2.
FIG. 2.

Electroluminescence spectra, 50% duty cycle, 3 kHz frequency, (a), and voltage-current dependencies (b).

Image of FIG. 3.
FIG. 3.

The dependence of light power on injected current of device 2 (a) and output power vs injected current for devices with quaternary and quinternary barriers (b).

Tables

Generic image for table
Table I.

The parameters of the device structures.

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/content/aip/journal/apl/93/8/10.1063/1.2974795
2008-08-26
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: GaSb based light emitting diodes with strained InGaAsSb type I quantum well active regions
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/8/10.1063/1.2974795
10.1063/1.2974795
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