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Electrical spin injection and optical detection in InAs based light emitting diodes
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) OPD vs magnetic field at (black squares: experimental data). Lines are calculated OPD for and at (black dashed) and (red dotted). Good fits for with and or and are indistinguishable (blue solid). Upper left inset: schematic band diagram for zero bias; the 3 ML ZnTe layer between InAs and (CdMn)Se as well as the substrate and cap layers has been omitted for simplicity. Upper right inset: processed sample structure showing the square LED mesas. (b) Simulations of the OPD from the rate equation model as a function of magnetic field for various ratios of the lifetimes at a fixed carrier temperature. (c) Similar simulations for three temperatures at fixed and .

Image of FIG. 2.
FIG. 2.

Measured OPD as a function of the sample bath temperature at fixed magnetic field (black squares). The inset shows the values of determined by calculating the measured peak OPD at different temperatures. The predicted temperature dependence for assuming an optical recombination time of 200 ps and a spin-flip rate determined by the sum of the EY and DP spin relaxation spin-flip rates is indicated by the dotted line.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical spin injection and optical detection in InAs based light emitting diodes