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GaNAsSb/GaAs waveguide photodetector with response up to grown by molecular beam epitaxy
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10.1063/1.2976124
/content/aip/journal/apl/93/8/10.1063/1.2976124
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/8/10.1063/1.2976124
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

X-ray diffraction profile of GaNAsSb/GaAs sample with inset showing its layer thickness.

Image of FIG. 2.
FIG. 2.

(224) x-ray reciprocal space map of GaNAsSb/GaAs WGPD. S and L denote the GaAs substrate peak and GaNAsSb layer peak, respectively.

Image of FIG. 3.
FIG. 3.

Current-voltage characteristics of WGPD with ridge width and ridge length. Negative voltage indicates reverse-biased region.

Image of FIG. 4.
FIG. 4.

Normalized photoresponse characteristics of GaNAsSb/GaAs WGPD devices with ridge width and ridge length and the top-illuminated photodetector with the same material system from Ref. 4.

Image of FIG. 5.
FIG. 5.

Photoresponsivity characteristics of GaNAsSb/GaAs WGPD devices with different ridge widths and lengths measured at wavelength under reverse-biased voltage of 1.5 V.

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/content/aip/journal/apl/93/8/10.1063/1.2976124
2008-08-25
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: GaNAsSb/GaAs waveguide photodetector with response up to 1.6 μm grown by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/8/10.1063/1.2976124
10.1063/1.2976124
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