Full text loading...
X-ray diffraction profile of GaNAsSb/GaAs sample with inset showing its layer thickness.
(224) x-ray reciprocal space map of GaNAsSb/GaAs WGPD. S and L denote the GaAs substrate peak and GaNAsSb layer peak, respectively.
Current-voltage characteristics of WGPD with ridge width and ridge length. Negative voltage indicates reverse-biased region.
Normalized photoresponse characteristics of GaNAsSb/GaAs WGPD devices with ridge width and ridge length and the top-illuminated photodetector with the same material system from Ref. 4.
Photoresponsivity characteristics of GaNAsSb/GaAs WGPD devices with different ridge widths and lengths measured at wavelength under reverse-biased voltage of 1.5 V.
Article metrics loading...